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Rigorous analysis of circuit parameter extraction from an FDTD simulation excited with a resistive voltage source
Olli P. M. Pekonen 1 *, Jie Xu 1, Keijo I. Nikoskinen 2
1Electronics Laboratory, Nokia Research Center, P.O. Box 45, 00211 Helsinki, Finland
2Electromagnetics Laboratory, Helsinki University of Technology, Otakaari 5A, SF-02150 Espoo, Finland


*Correspondence to Olli P. M. Pekonen, Electronics Laboratory, Nokia Research Center, P.O. Box 45, 00211 Helsinki, Finland

Keywords
FDTD • circuit simulations • microwave solid-state circuits


Abstract
FDTD simulations excited with a resistive voltage source are under study in this article. Focus is on the parasitic capacitance of the excitation. It is shown that the resistance of the excitation is actually a frequency-dependent impedance. Because the resistive voltage source operates as a current source, errors are generated to the generator voltage of the excitation and, furthermore, to the extracted circuit parameters. Effective methods are presented to overcome this problem. ©1996 John Wiley & Sons, Inc.

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